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Metalorganic vapor phase epitaxy 1994MINAGAWA, SHIGEKAZU; HORIKOSHI, YOSHIJI.Journal of crystal growth. 1994, Vol 145, Num 1-4, issn 0022-0248, 1022 p.Conference Proceedings

Growth of GaAsN by low-pressure metalorganic chemical vapor deposition using plasma-cracked N₂SATO, M.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 99-103, issn 0022-0248Conference Paper

Novel nitrogen source materials in zinc selenide metalorganic chemical vapor depositionKAMATA, A.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 557-561, issn 0022-0248Conference Paper

Recent petroleum situation and Japan's petroleum agency La situation récente du pétrole et la politique énergétique au JaponTOYOSHIMA, T.Pan Pacific synfuels conference. 1982, pp 3-12Conference Proceedings

Australia's energy ressources and developments prospects Réserves énergétiques en Australie et perspectives de développementKIRK, J.F.Pan Pacific synfuels conference. 1982, pp 13-25Conference Proceedings

Resources and development program of alternative energy in Indonesia Réserves et programmes de développement concernant le potentiel d'énergie en IndonésiePan Pacific synfuels conference. 1982, pp 31-41Conference Proceedings

Recents trends in alcohol production from biomass in Brazil Récentes orientations concernant la production d'alcool à partir de la biomasse au BrésilVARGAS, J.I.Pan Pacific synfuels conference. 1982, pp 92-104Conference Proceedings

GLOBECOM'87 : IEEE/IEICE global telecommunications conference 1987, Nov. 15-18, TokyoGlobal telecommunications conference 1987. 1987, 3Vol, 30-2174 pConference Proceedings

PROCEEDINGS/(1ST) INTERNATIONAL SYMPOSIUM ON PHYSICS IN OPEN ENDED FUSION SYSTEMS, UNIVERSITY OF TSUKUBA (JAPAN), APRIL 15-18, 19801980; INTERNATIONAL SYMPOSIUM ON PHYSICS IN OPEN ENDED FUSION SYSTEMS. 1/1980-04-14/TSUKUBA; JPN; DA. 1980; 465 P.; 26 CMConference Proceedings

In-situ monitoring and control of surface processes in metalorganic vapor phase epitaxy by surface photo-absorptionKOBAYASHI, N.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 1-11, issn 0022-0248Conference Paper

Metalorganic vapor phase epitaxy using organic group V precursorsKOMENO, J.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 468-472, issn 0022-0248Conference Paper

Zn-doped InGaN growth and InGaN/AlGaN double-heterostructure blue-light-emitting diodesNAKAMURA, S.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 911-917, issn 0022-0248Conference Paper

Economic feasibility of synthetic fuels projects Praticabilité économique de projets de combustibles de synthèseLEIBSON, I.Pan Pacific synfuels conference. 1982, pp 808-827Conference Proceedings

A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor depositionOHBA, Y; HATANO, A.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 214-218, issn 0022-0248Conference Paper

Annealing effects on hydrogen passivation of Zn acceptors in AlGaInP with p-GaAs cap layer grown by metalorganic vapor phase epitaxyISHIBASHI, A; MANNOH, M; OHNAKA, K et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 414-419, issn 0022-0248Conference Paper

Atomic layer controlled metalorganic chemical vapor deposition of superconducting YBa₂Cu₃O_x filmsODA, S; ZAMA, H; YAMAMOTO, S et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 232-236, issn 0022-0248Conference Paper

New selective metalorganic chemical vapor deposition growth method for InAlAs with high aluminum compositionKUSHIBE, M; TAKAOKA, K.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 263-270, issn 0022-0248Conference Paper

Scanning tunneling microscopy study of two-dimensional nuclei on GaAs grown by metalorganic chemical vapor depositionKASU, M; KOBAYASHI, N.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 120-125, issn 0022-0248Conference Paper

Selective area metalorganic chemical vapor deposition growth for hexagonal-facet lasersANDO, S; KOBAYASHI, N; ANDO, H et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 302-307, issn 0022-0248Conference Paper

The deep levels in InGaAlP epilayers grown by metalorganic chemical vapor deposition using tertiarybutylphosphineIZUMIYA, T; ISHIKAWA, H; MASHITA, M et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 153-157, issn 0022-0248Conference Paper

A study of the growth kinetics of II-VI metalorganic vapour phase epitaxy using in situ laser reflectometryIRVINE, S. J. C; BAJAJ, J.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 74-81, issn 0022-0248Conference Paper

Characterization of GaInP layers grown on GaAs substrates monitored by surface photo-absorptionYANAGISAWA, H; TANAKA, T; MINAGAWA, S et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 12-16, issn 0022-0248Conference Paper

Comparison of alternate P-sources to phosphine in the metalorganic vapor phase epitaxy growth of p-AlGaInPMANNOH, M; ISHIBASHI, A; OHNAKA, K et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 158-163, issn 0022-0248Conference Paper

Electrical characterization of semi-insulating metalorganic vapor phase epitaxy GaAs grown by controlled oxygen incorporationHUANG, J. W; KUECH, T. F.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 462-467, issn 0022-0248Conference Paper